发明申请
- 专利标题: THIN FILM TRANSISTOR
- 专利标题(中): 薄膜晶体管
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申请号: US11610541申请日: 2006-12-14
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公开(公告)号: US20070267635A1公开(公告)日: 2007-11-22
- 发明人: Chih-Hsiung Chang , Chien-Shen Weng , Chieh-Chou Hsu , Chia-Tien Peng , Jhen-Yue Li
- 申请人: Chih-Hsiung Chang , Chien-Shen Weng , Chieh-Chou Hsu , Chia-Tien Peng , Jhen-Yue Li
- 申请人地址: TW Hsinchu
- 专利权人: AU OPTRONICS CORP.
- 当前专利权人: AU OPTRONICS CORP.
- 当前专利权人地址: TW Hsinchu
- 优先权: TW95117431 20060517
- 主分类号: H01L29/04
- IPC分类号: H01L29/04
摘要:
A thin film transistor is disclosed, comprising a substrate, a polysilicon layer overlying the substrate, a gate insulating layer overlying the polysilicon layer, a gate electrode, a dielectric interlayer overlying the gate electrode and gate insulating layer, and a source/drain electrode overlying the dielectric interlayer. Specifically, the gate electrode comprises a first electrode layer overlying the gate insulating layer and a second electrode layer essentially overlying an upper surface of the first electrode layer. The first and second electrode layers each has substantially the same profile with a taper angle of less than about 90 degrees.
公开/授权文献
- US07649207B2 Thin film transistor 公开/授权日:2010-01-19