发明申请
US20070267705A1 Semiconductor integrated circuit device having MIM capacitor and method of fabricating the same
有权
具有MIM电容器的半导体集成电路器件及其制造方法
- 专利标题: Semiconductor integrated circuit device having MIM capacitor and method of fabricating the same
- 专利标题(中): 具有MIM电容器的半导体集成电路器件及其制造方法
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申请号: US11588575申请日: 2006-10-27
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公开(公告)号: US20070267705A1公开(公告)日: 2007-11-22
- 发明人: Seok-Jun Won , Jung-Min Park
- 申请人: Seok-Jun Won , Jung-Min Park
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2006-0045712 20060522
- 主分类号: H01L29/94
- IPC分类号: H01L29/94 ; H01L21/8234
摘要:
In a semiconductor integrated circuit device and a method of formation thereof, a semiconductor device comprises: a semiconductor substrate; an insulator at a top portion of the substrate, defining an insulator region; a conductive layer pattern on the substrate, the conductive layer pattern being patterned from a common conductive layer, the conductive layer pattern including a first pattern portion on the insulator in the insulator region and a second pattern portion on the substrate in an active region of the substrate, wherein the second pattern portion comprises a gate of a transistor in the active region; and a capacitor on the insulator in the insulator region, the capacitor including: a lower electrode on the first pattern portion of the conductive layer pattern, a dielectric layer pattern on the lower electrode, and an upper electrode on the dielectric layer pattern.