发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US11531610申请日： 2006-09-13
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公开(公告)号： US20070269955A2公开(公告)日： 2007-11-22
- 发明人: Ichiro YAMAMOTO
- 申请人： Ichiro YAMAMOTO
- 申请人地址： JP Kawasaki, Kanagawa
- 专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人地址： JP Kawasaki, Kanagawa
- 优先权： JP2002-380063 20021227
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY (0.05≦X≦0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.
公开/授权文献
- US07524723B2 Semiconductor device and method for manufacturing same 公开/授权日：2009-04-28
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