发明申请
US20070269991A1 SEMICONDUCTOR NANOCRYSTAL-METAL COMPLEX AND METHOD OF PREPARING THE SAME
审中-公开
SEMICONDUCTOR NANOCRYSTAL-METAL COMPLEX AND METHOD OF PREPARTING THE SAME
- 专利标题： SEMICONDUCTOR NANOCRYSTAL-METAL COMPLEX AND METHOD OF PREPARING THE SAME
- 专利标题（中）： SEMICONDUCTOR NANOCRYSTAL-METAL COMPLEX AND METHOD OF PREPARTING THE SAME
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申请号： US11621300申请日： 2007-01-09
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公开(公告)号： US20070269991A1公开(公告)日： 2007-11-22
- 发明人: Eun Joo JANG , Shin Ae JUN , Jung Eun LIM
- 申请人： Eun Joo JANG , Shin Ae JUN , Jung Eun LIM
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2006-0043760 20060516
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
Disclosed herein are a semiconductor nanocrystal-metal complex and a method for preparing the same. The semiconductor nanocrystal-metal complex includes a semiconductor nanocrystal and one or more metal particles bound to the semiconductor nanocrystal. The semiconductor nanocrystal-metal complex exhibits excellent photocurrent characteristics and an improved binding force, in addition to the characteristics of semiconductor nanocrystals, thus broadening the applicability of the semiconductor nanocrystal. The semiconductor nanocrystal-metal complex can be at room temperature without involving complicated steps.
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