发明申请
- 专利标题： ELECTRONIC DEVICES INCLUDING A SEMICONDUCTOR LAYER
- 专利标题（中）： 包括半导体层的电子器件
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申请号： US11836844申请日： 2007-08-10
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公开(公告)号： US20070272952A1公开(公告)日： 2007-11-29
- 发明人: Voon-Yew Thean , Brian Goolsby , Linda McCormick , Bich-Yen Nguyen , Colita Parker , Mariam Sadaka , Victor Vartanian , Ted White , Melissa Zavala
- 申请人： Voon-Yew Thean , Brian Goolsby , Linda McCormick , Bich-Yen Nguyen , Colita Parker , Mariam Sadaka , Victor Vartanian , Ted White , Melissa Zavala
- 申请人地址： US TX Austin 78735
- 专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址： US TX Austin 78735
- 主分类号： H01L29/80
- IPC分类号： H01L29/80
摘要：
An electronic device can include a first semiconductor portion and a second semiconductor portion, wherein the compositions of the first and second semiconductor portions are different from each other. In one embodiment, the first and second semiconductor portions can have different stresses compared to each other. In one embodiment, the electronic device may be formed by forming an oxidation mask over the first semiconductor portion. A second semiconductor layer can be formed over the second semiconductor portion of the first semiconductor layer and have a different composition compared to the first semiconductor layer. An oxidation can be performed, and a concentration of a semiconductor element (e.g., germanium) within the second portion of the first semiconductor layer can be increased. In another embodiment, a selective condensation may be performed, and a field isolation region can be formed between the first and second portions of the first semiconductor layer.
公开/授权文献
- US07821067B2 Electronic devices including a semiconductor layer 公开/授权日：2010-10-26
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