发明申请
- 专利标题: FERROELECTRIC MEMORY CELL AND MANUFACTURING METHOD THEREOF
- 专利标题(中): 电磁记忆体及其制造方法
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申请号: US11753292申请日: 2007-05-24
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公开(公告)号: US20070272959A1公开(公告)日: 2007-11-29
- 发明人: Osamu Hidaka , Iwao Kunishima
- 申请人: Osamu Hidaka , Iwao Kunishima
- 优先权: JPP2006-148445 20060529
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
A method of manufacturing a ferroelectric memory cell includes: forming device isolation regions; and source/drain regions; forming a gate insulating film on the semiconductor substrate; forming a gate electrode on the gate insulating film; forming; forming a contact plug to be connected to one of the source/drain regions. The method further includes: forming a lower electrode to be connected to the contact plug; depositing a sol-gel solution containing a ferroelectric minute crystal on the lower electrode to form a ferroelectric film; forming an upper electrode on the ferroelectric film; forming a second interlayer insulating film. The method further includes: forming a capacitor contact plug to be connected to the upper electrode; forming a substrate contact plug to be connected to the other one of the source/drain regions; and forming first and second wiring layers to be connected to the capacitor contact plug and the substrate contact plug, respectively.