发明申请
- 专利标题： Charge pump-type booster circuit
- 专利标题（中）： 电荷泵式升压电路
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申请号： US11709915申请日： 2007-02-22
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公开(公告)号： US20070273431A1公开(公告)日： 2007-11-29
- 发明人: Atsushi Sakurai , Yutaka Sato
- 申请人： Atsushi Sakurai , Yutaka Sato
- 申请人地址： JP Chiba-shi
- 专利权人： Seiko Instruments Inc.
- 当前专利权人： Seiko Instruments Inc.
- 当前专利权人地址： JP Chiba-shi
- 优先权： JPJP2006-044818 20060222
- 主分类号： G05F3/02
- IPC分类号： G05F3/02
摘要：
Provided is a charge pump circuit whose power efficiency is not reduced even when a threshold voltage of a transistor is increased by a substrate effect with an increase in the number of stages. A depletion transistor is used as an N-channel transistor included in an inverter of a high-voltage clock generating circuit. A P-channel enhancement transistor is used as a charge transfer device.
公开/授权文献
- US07427891B2 Charge pump-type booster circuit 公开/授权日：2008-09-23
信息查询
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