发明申请
- 专利标题： Reflective mask blank, reflective mask, and method of manufacturing semiconductor device
- 专利标题（中）： 反光掩模板，反射掩模和半导体器件的制造方法
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申请号： US11416208申请日： 2006-05-03
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公开(公告)号： US20070275308A1公开(公告)日： 2007-11-29
- 发明人: Morio Hosoya , Tsutomu Shoki
- 申请人： Morio Hosoya , Tsutomu Shoki
- 专利权人： HOYA CORPORATION
- 当前专利权人： HOYA CORPORATION
- 主分类号： B32B17/10
- IPC分类号： B32B17/10 ; B32B9/00 ; G03F1/00 ; G21K5/00 ; B32B17/06
摘要：
A reflective mask blank and a reflective mask each have, on a multilayer reflective film, a protective film that protects the multilayer reflective film from etching during pattern formation of an absorber layer or a buffer layer formed on the protective film. The protective film is formed by a ruthenium compound containing ruthenium (Ru) and at least one selected from the group consisting of molybdenum (Mo), niobium (Nb), zirconium (Zr), yttrium (Y), boron (B), titanium (Ti), and lanthanum (La). A reflection enhancement film of Ru may be further formed on the surface of the protective film.
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