发明申请
- 专利标题： Barrier layer for fine-pitch mask-based substrate bumping
- 专利标题（中）： 阻挡层用于细间距掩模基底碰撞
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申请号： US11441841申请日： 2006-05-26
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公开(公告)号： US20070275550A1公开(公告)日： 2007-11-29
- 发明人: Ravi K. Nalla , Christine H. Tsau , Mark S. Hlad
- 申请人： Ravi K. Nalla , Christine H. Tsau , Mark S. Hlad
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/00
摘要：
A structure that may be used in substrate solder bumping comprises a substrate (110), a solder resist layer (120) disposed over the substrate, a plurality of solder resist openings (121) in a surface (122) of the solder resist layer, a conformal barrier layer (130) having a first portion (131) over the surface of the solder resist layer and a second portion (132) in the solder resist openings, a mask layer (140) over the first portion of the conformal barrier layer, and a solder material (150) in the solder resist openings over the metal layer. The conformal barrier layer acts as a barrier against interaction between the solder resist layer and the mask layer during solder reflow.
公开/授权文献
- US07776734B2 Barrier layer for fine-pitch mask-based substrate bumping 公开/授权日：2010-08-17
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