发明申请
- 专利标题: Semiconductor radiological detector and semiconductor radiological imaging apparatus
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申请号: US11705595申请日: 2007-02-13
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公开(公告)号: US20070278414A1公开(公告)日: 2007-12-06
- 发明人: Kazuma Yokoi , Hiroshi Kitaguchi , Takafumi Ishitsu , Kensuke Amemiya , Yuuichirou Ueno , Katsutoshi Tsuchiya , Norihito Yanagita , Shinichi Kojima
- 申请人: Kazuma Yokoi , Hiroshi Kitaguchi , Takafumi Ishitsu , Kensuke Amemiya , Yuuichirou Ueno , Katsutoshi Tsuchiya , Norihito Yanagita , Shinichi Kojima
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2003-342685 20030930
- 主分类号: G01T1/24
- IPC分类号: G01T1/24
摘要:
The semiconductor radiological detector 1 minimizes a dead space resulting from the draw-out of a signal line from an electrode and which allows a number of semiconductor devices to be densely arranged to improve sensitivity and spatial resolution. The semiconductor radiological detector 1 comprises a semiconductor device 2, an anode 3 attached to one surface of the semiconductor device 2, and a cathode 4 attached to the other surface of the semiconductor device 2. A signal line 5 is provided on the anode 3; the signal line 5 extends straight from the anode 3 and is connected to an X axis wire 12. Another signal line 13 is provided on the cathode 4; the signal line 13 extends straight from the cathode 4 and is connected to a Y axis wire 14.
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