发明申请
US20070278556A1 Two bits non volatile memory cells and method of operating the same
审中-公开
两位非易失性存储单元及其操作方法相同
- 专利标题： Two bits non volatile memory cells and method of operating the same
- 专利标题（中）： 两位非易失性存储单元及其操作方法相同
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申请号： US11442119申请日： 2006-05-30
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公开(公告)号： US20070278556A1公开(公告)日： 2007-12-06
- 发明人: Ya-Chin King , Chrong-Jung Lin
- 申请人： Ya-Chin King , Chrong-Jung Lin
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A twin non-volatile memory cell on unit device and method of operating the same are disclosed. The device is formed in the n-well and compatible with CMOS processes comprising a selecting gate, two ONO spacers, a p+ source/drain, and n extended source/drain. To program the cells, two strategies can be taken. One is by a band to band hot electron injection can be carried out. The other is by channel hot hole induced hot electron injection. To read the right cell of the twin nonvolatile cells, a reverse read is taken so as to shield the left cell. In the reading process, the biased on the selecting gate and the source electrode have to make sure the tapered main channel beneath selecting gate has its narrower end through the depletion boundary to connect the second channel beneath the extended source. To erase the datum in the selected cell, two approaching can be carried out. One is by FN erase, the other is by band to band induced hot hole injection.
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