发明申请
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11798068申请日: 2007-05-10
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公开(公告)号: US20070278587A1公开(公告)日: 2007-12-06
- 发明人: Tomonori Aoyama , Tomohiro Saito , Katsuyuki Sekine , Kazuaki Nakajima , Motoyuki Sato , Takuya Kobayashi
- 申请人: Tomonori Aoyama , Tomohiro Saito , Katsuyuki Sekine , Kazuaki Nakajima , Motoyuki Sato , Takuya Kobayashi
- 优先权: JP2006-135550 20060515; JP2007-004917 20070112
- 主分类号: H01L29/94
- IPC分类号: H01L29/94
摘要:
This disclosure concerns a semiconductor device comprising a semiconductor substrate; a gate dielectric film provided on the semiconductor substrate and containing Hf, Si, and O or containing Zr, Si and O; a gate electrode of an n-channel FET provided on the gate dielectric film, the gate electrode being made of nickel silicide containing nickel at a higher content than silicon; an aluminum layer provided at a bottom portion of the gate electrode of the n-channel FET; and a gate electrode of a p-channel FET provided on the gate dielectric film, the gate electrode being made of nickel silicide containing nickel at a higher content than silicon.