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发明申请
US20070281483A1 COMPOSITIONS FOR CHEMICAL MECHANICAL POLISHING SILICA AND SILICON NITRIDE HAVING IMPROVED ENDPOINT DETECTION 失效
用于化学机械抛光的组合物具有改进的端点检测的二氧化硅和氮化硅

  • 专利标题： COMPOSITIONS FOR CHEMICAL MECHANICAL POLISHING SILICA AND SILICON NITRIDE HAVING IMPROVED ENDPOINT DETECTION
  • 专利标题（中）： 用于化学机械抛光的组合物具有改进的端点检测的二氧化硅和氮化硅
  • 申请号： US11446936
    申请日： 2006-06-05
  • 公开(公告)号： US20070281483A1
    公开(公告)日： 2007-12-06
  • 发明人: Brian Mueller
  • 申请人： Brian Mueller
  • 主分类号： H01L21/461
  • IPC分类号： H01L21/461
COMPOSITIONS FOR CHEMICAL MECHANICAL POLISHING SILICA AND SILICON NITRIDE HAVING IMPROVED ENDPOINT DETECTION
摘要：
The present invention provides a method of manufacturing a composition for polishing silica and silicon nitride on a semiconductor substrate. The method comprises ion-exchanging carboxylic acid polymer to reduce ammonia and combining by weight percent 0.01 to 5 of the ion-exchanged carboxylic acid polymer with 0.001 to 1 quaternary ammonium compound, 0.001 to 1 phthalic acid and salts thereof, 0.01 to 5 abrasive, and balance water.
摘要（中）：

本发明提供一种在半导体衬底上制备用于研磨二氧化硅和氮化硅的组合物的方法。 该方法包括离子交换羧酸聚合物以还原氨，并将0.01至5重量百分数的离子交换的羧酸聚合物与0.001至1个季铵化合物，0.001至1邻苯二甲酸及其盐，0.01至5个研磨剂， 并平衡水分。

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