发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11785801申请日： 2007-04-20
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公开(公告)号： US20070284653A1公开(公告)日： 2007-12-13
- 发明人: Hiroaki Ueno , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
- 申请人： Hiroaki Ueno , Manabu Yanagihara , Yasuhiro Uemoto , Tsuyoshi Tanaka
- 优先权： JP2006-160206 20060608
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A semiconductor device includes a first group III-V nitride semiconductor layer, a second group III-V nitride semiconductor layer having a larger band gap than the first group Ill-V nitride semiconductor layer and at least one ohmic electrode successively formed on a substrate. The ohmic electrode is formed so as to have a base portion penetrating the second group III-V nitride semiconductor layer and reaching a portion of the first group III-V nitride semiconductor layer disposed beneath a two-dimensional electron gas layer. An impurity doped layer is formed in portions of the first group III-V nitride semiconductor layer and the second group III-V nitride semiconductor layer in contact with the ohmic electrode.
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