发明申请
US20070285643A1 Method For Manufacturing Reflective Optical Element, Reflective Optical Elements, Euv-Lithography Apparatus And Methods For Operating Optical Elements And Euv-Lithography Apparatus, Methods For Determining The Phase Shift, Methods For Determining The Layer Thickness, And Apparatuses For Carrying Out The Methods 审中-公开
制造反射光学元件的方法,反射光学元件,Euv光刻设备以及用于操作光学元件和Euv光刻设备的方法,用于确定相移的方法,用于确定层厚度的方法以及用于执行方法的设备

  • 专利标题: Method For Manufacturing Reflective Optical Element, Reflective Optical Elements, Euv-Lithography Apparatus And Methods For Operating Optical Elements And Euv-Lithography Apparatus, Methods For Determining The Phase Shift, Methods For Determining The Layer Thickness, And Apparatuses For Carrying Out The Methods
  • 专利标题(中): 制造反射光学元件的方法,反射光学元件,Euv光刻设备以及用于操作光学元件和Euv光刻设备的方法,用于确定相移的方法,用于确定层厚度的方法以及用于执行方法的设备
  • 申请号: US10598481
    申请日: 2005-03-04
  • 公开(公告)号: US20070285643A1
    公开(公告)日: 2007-12-13
  • 发明人: Marco WedowskiNadyeh SharilooFrank ScholzeJohannes Tuemmler
  • 申请人: Marco WedowskiNadyeh SharilooFrank ScholzeJohannes Tuemmler
  • 申请人地址: DE Oberkochen
  • 专利权人: CARL ZEISS SMT AG
  • 当前专利权人: CARL ZEISS SMT AG
  • 当前专利权人地址: DE Oberkochen
  • 优先权: DE102004011356.4 20040305; DE102004011355.6 20040305
  • 国际申请: PCT/EP05/50985 WO 20050304
  • 主分类号: G03B27/54
  • IPC分类号: G03B27/54 G01B9/00
Method For Manufacturing Reflective Optical Element, Reflective Optical Elements, Euv-Lithography Apparatus And Methods For Operating Optical Elements And Euv-Lithography Apparatus, Methods For Determining The Phase Shift, Methods For Determining The Layer Thickness, And Apparatuses For Carrying Out The Methods
摘要:
The invention relates to a method for manufacturing of a multilayer system (25) with a cap layer system (30), in particular for a reflective optical element for the extreme ultraviolet up to the soft x-ray wavelength range, comprising the steps of: 1. preparing a coating design for the multilayer system (25) with cap layer system (30); 2. coating a substrate (20) with the multilayer system (25) with cap layer system (30); 3. spatially resolved measurement of the coated substrate in terms of reflectance and photoelectron current in at least one surface point; 4. comparison of the measured data with data modelled for different thicknesses of the layers (31, 32, 33) of the cap layer system (30) and/or the layers (21, 22, 23, 24) of the multilayer system (25) for determining of the thickness distribution obtained by the coating; 5. if necessary, adjusting of the coating parameters and repeating steps 2 to 5 until the coated thickness distribution coincides with the design. The invention also relates to further manufacturing methods, reflective optical elements, EUV-lithography apparatuses, and methods for operating optical elements and EUV-lithography apparatuses as well as methods for determining the phase shift, methods for determining the layer thickness, and apparatuses for carrying out the methods.
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