- 专利标题： Method of determining the correct average bias compensation voltage during a plasma process
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申请号： US11725772申请日： 2007-03-19
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公开(公告)号： US20070285869A1公开(公告)日： 2007-12-13
- 发明人: Arthur Howald
- 申请人： Arthur Howald
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corp.
- 当前专利权人： Lam Research Corp.
- 当前专利权人地址： US CA Fremont
- 主分类号： H01L21/68
- IPC分类号： H01L21/68
摘要：
A method for removing a substrate that is attached to a bipolar electrostatic chuck (ESC) by application of a bipolar ESC voltage is provided which includes discontinuing the bipolar ESC voltage after processing a current substrate, and determining a monopolar component error of the processing. The method also includes correcting the monopolar component error for a subsequent substrate.
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