发明申请
- 专利标题: PROCESS CHAMBER FOR DIELECTRIC GAPFILL
- 专利标题(中): 电介质加工室
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申请号: US11754858申请日: 2007-05-29
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公开(公告)号: US20070289534A1公开(公告)日: 2007-12-20
- 发明人: Dmitry Lubomirsky , Qiwei Liang , Soonam Park , Kien Chuc , Ellie Yieh
- 申请人: Dmitry Lubomirsky , Qiwei Liang , Soonam Park , Kien Chuc , Ellie Yieh
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: C23C16/452
- IPC分类号: C23C16/452
摘要:
A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a radiative heating system to heat the substrate that includes at least one light source, where at least some of the light emitted from the light source travels through the top side of the deposition chamber before reaching the substrate. The system may also include a precursor distribution system to introduce the reactive radical precursor and additional dielectric precursors to the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.
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