发明申请
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体器件及其制造方法
-
申请号： US11889451申请日： 2007-08-13
-
公开(公告)号： US20070290208A1公开(公告)日： 2007-12-20
- 发明人: Kaoru Hiyama , Tomoya Sanuki , Osamu Fujii
- 申请人： Kaoru Hiyama , Tomoya Sanuki , Osamu Fujii
- 专利权人： KABUSHIKI KAISHA TOSHIBA.
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA.
- 优先权： JP2004-001075 20040106
- 主分类号： H01L29/10
- IPC分类号： H01L29/10
摘要：
A semiconductor device includes a substrate having a first area and a second area adjacent to the first area, a first silicon layer provided on the substrate in the first area, a relaxed layer which is provided on the substrate in the second area and which has a lattice constant greater than a lattice constant of the first silicon layer, and a strained-Si layer which is provided on the relaxed layer and which has a lattice constant substantially equivalent to the lattice constant of the relaxed layer.
信息查询
IPC分类:
