发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A LTPS FILM
- 专利标题(中): 半导体器件和制造LTPS膜的方法
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申请号: US11776561申请日: 2007-07-12
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公开(公告)号: US20070290210A1公开(公告)日: 2007-12-20
- 发明人: Chih-Hsiung Chang , Yi-Wei Chen , Ming-Wei Sun
- 申请人: Chih-Hsiung Chang , Yi-Wei Chen , Ming-Wei Sun
- 优先权: TW093128886 20040923
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L21/20
摘要:
A semiconductor device and a method of fabricating a low-temperature polysilicon film are provided. An amorphous silicon film is formed over a substrate. An insulating layer and a laser absorption layer are formed over the amorphous silicon film. A photolithographic and etching process is performed to remove portions of the laser absorption layer and the insulating layer to expose portions of the amorphous silicon film. A laser crystallization process is utilized to convert the amorphous silicon film into a polysilicon film.