发明申请
US20070297221A1 Memory cell programmed using a temperature controlled set pulse
失效
使用温度控制设置脉冲编程的存储单元
- 专利标题： Memory cell programmed using a temperature controlled set pulse
- 专利标题（中）： 使用温度控制设置脉冲编程的存储单元
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申请号： US11455340申请日： 2006-06-19
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公开(公告)号： US20070297221A1公开(公告)日： 2007-12-27
- 发明人: Jan Boris Philipp , Thomas Happ
- 申请人： Jan Boris Philipp , Thomas Happ
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C11/00 ; G11C7/04 ; G11C5/14
摘要：
A memory device includes a phase change memory cell and a circuit. The circuit is for programming the memory cell to a selected one of more than two states by applying a temperature controlled set pulse to the memory cell.
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