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发明申请
US20070298596A1 Method of removing a photoresist pattern, method of forming a dual polysilicon layer using the removing method and method of manufacturing a semiconductor device using the removing 审中-公开
使用去除方法和使用该去除制造半导体器件的方法形成双重多晶硅层的方法

Method of removing a photoresist pattern, method of forming a dual polysilicon layer using the removing method and method of manufacturing a semiconductor device using the removing
摘要：
In a method of removing a photoresist pattern, a photoresist pattern may be formed on an object layer. Impurities may be implanted into the object layer by a first ion implantation process employing the first photoresist pattern as a first ion implantation mask. The photoresist pattern hardened by the first ion implantation process may be transformed into a first water-soluble photoresist pattern. The water-soluble photoresist pattern may be removed from the object layer.
摘要（中）：

在去除光致抗蚀剂图案的方法中，可以在物体层上形成光致抗蚀剂图案。 可以通过使用第一光致抗蚀剂图案作为第一离子注入掩模的第一离子注入工艺将杂质注入到物体层中。 通过第一离子注入工艺固化的光致抗蚀剂图案可以转化为第一水溶性光致抗蚀剂图案。 水溶性光致抗蚀剂图案可以从目标层去除。

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