Invention Application
- Patent Title: NONVOLATILE PROGRAMMABLE RESISTOR MEMORY CELL
- Patent Title (中): 非易失性可编程电阻器存储器单元
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Application No.: US11427820Application Date: 2006-06-30
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Publication No.: US20080001172A1Publication Date: 2008-01-03
- Inventor: Siegfried F. Karg , Gerhard Ingmar Meijer
- Applicant: Siegfried F. Karg , Gerhard Ingmar Meijer
- Main IPC: H01L29/739
- IPC: H01L29/739
Abstract:
A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second electrode and a reversible and persistent programmable resistance structure connecting the first and second electrode. The resistance is modifiable by altering the ionic distribution of a high-mobility oxygen ion conductor region. As an alternate embodiment, the memory cell further includes a transition-metal oxide region.
Public/Granted literature
- US07569459B2 Nonvolatile programmable resistor memory cell Public/Granted day:2009-08-04
Information query
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