发明申请
- 专利标题： NONVOLATILE PROGRAMMABLE RESISTOR MEMORY CELL
- 专利标题（中）： 非易失性可编程电阻器存储器单元
-
申请号： US11427820申请日： 2006-06-30
-
公开(公告)号： US20080001172A1公开(公告)日： 2008-01-03
- 发明人: Siegfried F. Karg , Gerhard Ingmar Meijer
- 申请人： Siegfried F. Karg , Gerhard Ingmar Meijer
- 主分类号： H01L29/739
- IPC分类号： H01L29/739
摘要：
A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second electrode and a reversible and persistent programmable resistance structure connecting the first and second electrode. The resistance is modifiable by altering the ionic distribution of a high-mobility oxygen ion conductor region. As an alternate embodiment, the memory cell further includes a transition-metal oxide region.
公开/授权文献
- US07569459B2 Nonvolatile programmable resistor memory cell 公开/授权日：2009-08-04
信息查询
IPC分类:
