发明申请
US20080001196A1 TRENCH CAPACITORS AND MEMORY CELLS USING TRENCH CAPACITORS AND METHOD OF FABRICATING SAME
失效
使用TRENCH电容器的TRENCH电容器和存储器电池及其制造方法
- 专利标题： TRENCH CAPACITORS AND MEMORY CELLS USING TRENCH CAPACITORS AND METHOD OF FABRICATING SAME
- 专利标题（中）： 使用TRENCH电容器的TRENCH电容器和存储器电池及其制造方法
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申请号： US11427065申请日： 2006-06-28
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公开(公告)号： US20080001196A1公开(公告)日： 2008-01-03
- 发明人: Kangguo Cheng , Xi Li
- 申请人： Kangguo Cheng , Xi Li
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A trench structure, a method of forming the trench structure, a memory cell using the trench structure and a method of forming a memory cell using the trench structure. The trench structure includes: a substrate; a trench having contiguous upper, middle and lower regions, the trench extending from a top surface of said substrate into said substrate; the upper region of the trench having a vertical sidewall profile; and the middle region of the trench having a tapered sidewall profile.
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