Invention Application
US20080001295A1 METHOD FOR REDUCING DEFECTS AFTER A METAL ETCHING IN SEMICONDUCTOR DEVICES
审中-公开
在半导体器件中金属蚀刻后减少缺陷的方法
- Patent Title: METHOD FOR REDUCING DEFECTS AFTER A METAL ETCHING IN SEMICONDUCTOR DEVICES
- Patent Title (中): 在半导体器件中金属蚀刻后减少缺陷的方法
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Application No.: US11855229Application Date: 2007-09-14
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Publication No.: US20080001295A1Publication Date: 2008-01-03
- Inventor: Simone Alba , Alessandro Spandre , Barbara Zanderighi
- Applicant: Simone Alba , Alessandro Spandre , Barbara Zanderighi
- Applicant Address: IT Agrate Brianza (MI)
- Assignee: STMicroelectronics S.r.I.
- Current Assignee: STMicroelectronics S.r.I.
- Current Assignee Address: IT Agrate Brianza (MI)
- Priority: ITMI2003A002444 20031212
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
The method prevents oxidation or contamination phenomena of conductive interconnection structures in semiconductor devices and includes providing a layer of semiconductor or oxide base, a conductive layer or stack on the base layer, and an antireflection coating (ARC) layer on the conductive layer or stack. The method provides a thin dielectric covering layer on the antireflection coating layer to fill or cover the microfissures existing in the antireflection coating layer.
Information query
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