发明申请
- 专利标题： INTEGRATION PROCESSES FOR FABRICATING A CONDUCTIVE METAL OXIDE GATE FERROELECTRIC MEMORY TRANSISTOR
- 专利标题（中）： 用于制造导电金属氧化物栅极电介质晶体管的集成工艺
-
申请号： US11215521申请日： 2005-08-30
-
公开(公告)号： US20080003697A1公开(公告)日： 2008-01-03
- 发明人: Tingkai Li , Sheng Hsu , Bruce Ulrich
- 申请人： Tingkai Li , Sheng Hsu , Bruce Ulrich
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of fabricating a conductive metal oxide gate ferroelectric memory transistor includes forming an oxide layer a substrate and removing the oxide layer in a gate area; depositing a conductive metal oxide layer on the oxide layer and on the exposed gate area; depositing a titanium layer on the metal oxide layer; patterning and etching the titanium layer and the metal oxide layer to remove the titanium layer and the metal oxide layer from the substrate except in the gate area; depositing, patterning and etching an oxide layer to form a gate trench; depositing and etching a barrier insulator layer to form a sidewall barrier in the gate trench; removing the titanium layer from the gate area; depositing, smoothing and annealing a ferroelectric layer in the gate trench; depositing, patterning and etching a top electrode; and completing the conductive metal oxide gate ferroelectric memory transistor.
公开/授权文献
信息查询
IPC分类:
