The present invention provides a Schottky electrode for a nitride semiconductor device having a high barrier height, a low leak current performance and a low resistance and being thermally stable, and a process for production thereof. The Schottky electrode for a nitride semiconductor has a layered structure that comprises a copper (Cu) layer being in contact with the nitride semiconductor and a first electrode material layer formed on the copper (Cu) layer as an upper layer. As the first electrode material, a metal material which has a thermal expansion coefficient smaller than the thermal expansion coefficient of copper (Cu) and starts to undergo a solid phase reaction with copper (Cu) at a temperature of 400° C. or higher is employed.