发明申请
- 专利标题： SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 固态成像装置及其制造方法
-
申请号： US11776791申请日： 2007-07-12
-
公开(公告)号： US20080012088A1公开(公告)日： 2008-01-17
- 发明人: Tetsuya YAMAGUCHI , Hiroshige Goto , Hirofumi Yamashita , Ikuko Inoue , Nagataka Tanaka , Hisanori Ihara
- 申请人： Tetsuya YAMAGUCHI , Hiroshige Goto , Hirofumi Yamashita , Ikuko Inoue , Nagataka Tanaka , Hisanori Ihara
- 优先权： JP2006-193131 20060713
- 主分类号： H01L31/103
- IPC分类号： H01L31/103
摘要：
An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.
公开/授权文献
信息查询
IPC分类:
