发明申请
- 专利标题： SEMICONDUCTOR DEVICE HAVING TRENCH STRUCTURES AND METHOD
- 专利标题（中）： 具有TRENCH结构和方法的半导体器件
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申请号： US11769650申请日： 2007-06-27
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公开(公告)号： US20080012137A1公开(公告)日： 2008-01-17
- 发明人: Gordon Grivna , Peter Zdebel
- 申请人： Gordon Grivna , Peter Zdebel
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/44
摘要：
In one embodiment, a pair of sidewall passivated trench contacts is formed in a substrate to provide electrical contact to a sub-surface feature. A doped region is diffused between the pair of sidewall passivated trenches to provide low resistance contacts.
公开/授权文献
- US07420258B2 Semiconductor device having trench structures and method 公开/授权日：2008-09-02
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