发明申请
US20080013575A1 METHOD FOR MANUFACTURING OPTICAL DEVICE, AND OPTICAL DEVICE WAFER 有权
制造光学器件的方法和光学器件波形

  • 专利标题: METHOD FOR MANUFACTURING OPTICAL DEVICE, AND OPTICAL DEVICE WAFER
  • 专利标题(中): 制造光学器件的方法和光学器件波形
  • 申请号: US11769234
    申请日: 2007-06-27
  • 公开(公告)号: US20080013575A1
    公开(公告)日: 2008-01-17
  • 发明人: Yasutaka IMAI
  • 申请人: Yasutaka IMAI
  • 申请人地址: JP Tokyo
  • 专利权人: SEIKO EPSON CORPORATION
  • 当前专利权人: SEIKO EPSON CORPORATION
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2006-194188 20060714; JP2007-106844 20070416
  • 主分类号: H01S5/028
  • IPC分类号: H01S5/028 B29D11/00
METHOD FOR MANUFACTURING OPTICAL DEVICE, AND OPTICAL DEVICE WAFER
摘要:
A method for manufacturing an optical device includes the steps of: forming a first multilayer film, including forming a first mirror above a substrate, forming an active layer above the first mirror, forming a second mirror above the active layer, forming a semiconductor layer on the second mirror, and forming a sacrificial layer on the semiconductor layer; conducting a first examination step of conducting a reflectance examination on the first multilayer film; forming a second multilayer film by removing the sacrificial layer from the first multilayer film; conducting a second examination step of conducting a reflection coefficient examination on the second multilayer film; and patterning the second multilayer film to form a surface-emitting laser section having the first mirror, the active layer and the second mirror, and a diode section having the semiconductor layer, wherein the sacrificial layer is formed to have an optical film thickness of an odd multiple of λ/4, where λ is a design wavelength of light emitted by the surface-emitting laser section.
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