发明申请
- 专利标题: DEPOSITION OVER MIXED SUBSTRATES USING TRISILANE
- 专利标题(中): 使用TRISILANE的混合基板上的沉积
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申请号: US11843552申请日: 2007-08-22
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公开(公告)号: US20080014725A1公开(公告)日: 2008-01-17
- 发明人: Michael Todd
- 申请人: Michael Todd
- 申请人地址: US AZ Phoenix 85034-7200
- 专利权人: ASM AMERICA, INC.
- 当前专利权人: ASM AMERICA, INC.
- 当前专利权人地址: US AZ Phoenix 85034-7200
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
Trisilane is used in chemical vapor deposition methods to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. An example is in forming the base region of a heterojunction bipolar transistor, including simultaneous deposition over both single crystal semiconductor surfaces and amorphous insulating regions.
公开/授权文献
- US07547615B2 Deposition over mixed substrates using trisilane 公开/授权日:2009-06-16