发明申请
- 专利标题： Self-Aligned Nanotube Field Effect Transistor and Method of Fabricating Same
- 专利标题（中）： 自对准纳米管场效应晶体管及其制造方法
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申请号： US11835167申请日： 2007-08-07
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公开(公告)号： US20080017899A1公开(公告)日： 2008-01-24
- 发明人: Joerg Appenzeller , Phaedon Avouris , Kevin Chan , Philip Collins , Richard Martel , Hon-Sum Wong
- 申请人： Joerg Appenzeller , Phaedon Avouris , Kevin Chan , Philip Collins , Richard Martel , Hon-Sum Wong
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
公开/授权文献
- US07635856B2 Vertical nanotube field effect transistor 公开/授权日：2009-12-22
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