发明申请
- 专利标题： SEMICONDUCTOR DEVICES HAVING TORSIONAL STRESSES
- 专利标题（中）： 具有扭转应力的半导体器件
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申请号： US11458461申请日： 2006-07-19
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公开(公告)号： US20080020531A1公开(公告)日： 2008-01-24
- 发明人: Richard Q. Williams , Dureseti Chidambarrao , John J. Ellis-Monaghan , Shreesh Narasimha , Edward J. Nowak , John J. Pekarik
- 申请人： Richard Q. Williams , Dureseti Chidambarrao , John J. Ellis-Monaghan , Shreesh Narasimha , Edward J. Nowak , John J. Pekarik
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A FET structure is provided in which at least one stressor element provided at or near one corner of an active semiconductor region applies a stress in a first direction to one side of a channel region of the FET to apply a torsional stress to the channel region of the FET. In a particular embodiment, a second stressor element is provided at or near an opposite corner of the active semiconductor region to apply a stress in a second direction to an opposite side of a channel region of the FET, the second direction being opposite to the first direction. In this way, the first and second stressor elements cooperate together in applying a torsional stress to the channel region of the FET.
公开/授权文献
- US07462916B2 Semiconductor devices having torsional stresses 公开/授权日：2008-12-09
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