发明申请
- 专利标题: Focused ION Beam Apparatus
- 专利标题(中): 聚焦离子束设备
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申请号: US11828714申请日: 2007-07-26
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公开(公告)号: US20080023641A1公开(公告)日: 2008-01-31
- 发明人: Koichiro TAKEUCHI , Tohru Ishitani
- 申请人: Koichiro TAKEUCHI , Tohru Ishitani
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-204398 20060727
- 主分类号: G21K1/093
- IPC分类号: G21K1/093
摘要:
A focused ion beam apparatus enables an ion beam to be focused highly accurately on a sample at the beam spot position of the case of the absence of magnetic field without causing isotope separation of the ion beam on the sample, even when there is a magnetic field on the ion beam optical axis or the magnetic field fluctuates. The focused ion beam apparatus comprises a corrective magnetic field generating unit 10 disposed on the optical axis of the ion beam 3 for correcting the deflection of the ion beam 3 due to an external magnetic field. The corrective magnetic field generating unit 10 includes pole-piece pairs 26A and 26B, each of which having two pole pieces 26a and 26b or 26c and 26d that are adjacent to each other with a gap d. The pole-piece pairs 26A and 26B are disposed opposite to each other with a gap g (>d) across the optical axis of the ion beam 3. Each of the pole pieces 26a to 26d is wound with an internal coil 29, and the pole-piece pairs 26A and 26B are each wound with an external coil 30 in such a manner as to surround the internal coils 29.
公开/授权文献
- US07550740B2 Focused ION beam apparatus 公开/授权日:2009-06-23
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