发明申请
- 专利标题: ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 有机薄膜晶体管基板及其制造方法
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申请号: US11782980申请日: 2007-07-25
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公开(公告)号: US20080023695A1公开(公告)日: 2008-01-31
- 发明人: Seung Hwan CHO , Bo Sung Kim , Keun Kyu Song , Tae Young Choi
- 申请人: Seung Hwan CHO , Bo Sung Kim , Keun Kyu Song , Tae Young Choi
- 优先权: KR10-2006-0071235 20060728
- 主分类号: H01L51/10
- IPC分类号: H01L51/10 ; H01L51/40
摘要:
An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.