发明申请
- 专利标题： Display Device and Fabrication Method Thereof
- 专利标题（中）： 显示装置及其制作方法
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申请号： US11782701申请日： 2007-07-25
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公开(公告)号： US20080023704A1公开(公告)日： 2008-01-31
- 发明人: TAKESHI NODA , Takahiro Kamo , Eiji Oue , Mutsuko Hatano , Takeshi Sato
- 申请人： TAKESHI NODA , Takahiro Kamo , Eiji Oue , Mutsuko Hatano , Takeshi Sato
- 优先权： JP2006-202712 20060726
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L21/00
摘要：
The present invention obtains a system-in-panel display device using a high-performance thin film transistor by suppressing aggregation of a molten semiconductor at the time of allowing strip-like pseudo-single crystal to grow continuously with a direction control by radiating beams of continuous oscillation laser to a semiconductor film made of silicon while scanning. A display device includes a silicon nitride film formed on the insulation substrate, a silicon oxide film formed on the silicon nitride film, a semiconductor film formed on the silicon oxide film, and a thin film transistor which uses the semiconductor film. Here, the silicon oxide film is constituted of a first silicon oxide film formed using SiH4 and N2O as raw material gases and a second silicon oxide film formed using a TEOS gas as a raw material gas, and the semiconductor film is made of pseudo-single crystal having strip-like grains.
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