Invention Application
- Patent Title: INTEGRATED CIRCUIT MEMORY SYSTEM EMPLOYING SILICON RICH LAYERS
- Patent Title (中): 集成电路记忆系统采用硅胶层
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Application No.: US11461131Application Date: 2006-07-31
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Publication No.: US20080023751A1Publication Date: 2008-01-31
- Inventor: Amol Ramesh Joshi , Harpreet Sachar , YouSeok Suh , Shenqing Fang , Chih-Yuh Yang , Lovejeet Singh , David H. Matsumoto , Hidehiko Shiraiwa , Kuo-Tung Chang , Scott A. Bell , Allison Holbrook , Satoshi Torii
- Applicant: Amol Ramesh Joshi , Harpreet Sachar , YouSeok Suh , Shenqing Fang , Chih-Yuh Yang , Lovejeet Singh , David H. Matsumoto , Hidehiko Shiraiwa , Kuo-Tung Chang , Scott A. Bell , Allison Holbrook , Satoshi Torii
- Applicant Address: US CA Sunnyvale US CA Sunnyvale
- Assignee: SPANSION LLC,ADVANCED MICRO DEVICES, INC.
- Current Assignee: SPANSION LLC,ADVANCED MICRO DEVICES, INC.
- Current Assignee Address: US CA Sunnyvale US CA Sunnyvale
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
An integrated circuit memory system that includes: providing a substrate; forming a silicon rich charge storage layer over the substrate; forming a first isolation trench through the silicon rich charge storage layer in a first direction; and forming a second isolation trench through the silicon rich charge storage layer in a second direction.
Public/Granted literature
- US07675104B2 Integrated circuit memory system employing silicon rich layers Public/Granted day:2010-03-09
Information query
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