发明申请
- 专利标题： Ohmic contact film in semiconductor device
- 专利标题（中）： 欧姆接触膜在半导体器件中
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申请号： US11797851申请日： 2007-05-08
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公开(公告)号： US20080023835A1公开(公告)日： 2008-01-31
- 发明人: Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
- 申请人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
- 专利权人： HUGA OPTOTECH INC.
- 当前专利权人： HUGA OPTOTECH INC.
- 优先权： TW095127869 20060728
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxNy, where M represents the II group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, and x and y are molar numbers.
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