发明申请
US20080025066A1 PASSIVE ELEMENT MEMORY ARRAY INCORPORATING REVERSIBLE POLARITY WORD LINE AND BIT LINE DECODERS 有权
被动元素存储阵列引入可反转的极性字线和位线解码器

PASSIVE ELEMENT MEMORY ARRAY INCORPORATING REVERSIBLE POLARITY WORD LINE AND BIT LINE DECODERS
摘要:
Circuits and methods are described for decoding exemplary memory arrays of programmable and, in some embodiments, re-writable passive element memory cells, which are particularly useful for extremely dense three-dimensional memory arrays having more thane one memory plane. In addition, circuits and methods are described for selecting one or more array blocks of such a memory array, for selecting one or more word lines and bit lines within selected array blocks, for conveying data information to and from selected memory cells within selected array blocks, and for conveying unselected bias conditions to unselected array blocks.
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