发明申请
US20080025066A1 PASSIVE ELEMENT MEMORY ARRAY INCORPORATING REVERSIBLE POLARITY WORD LINE AND BIT LINE DECODERS
有权
被动元素存储阵列引入可反转的极性字线和位线解码器
- 专利标题: PASSIVE ELEMENT MEMORY ARRAY INCORPORATING REVERSIBLE POLARITY WORD LINE AND BIT LINE DECODERS
- 专利标题(中): 被动元素存储阵列引入可反转的极性字线和位线解码器
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申请号: US11461339申请日: 2006-07-31
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公开(公告)号: US20080025066A1公开(公告)日: 2008-01-31
- 发明人: Luca G. Fasoli , Christopher J. Petti , Roy E. Scheuerlein
- 申请人: Luca G. Fasoli , Christopher J. Petti , Roy E. Scheuerlein
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
Circuits and methods are described for decoding exemplary memory arrays of programmable and, in some embodiments, re-writable passive element memory cells, which are particularly useful for extremely dense three-dimensional memory arrays having more thane one memory plane. In addition, circuits and methods are described for selecting one or more array blocks of such a memory array, for selecting one or more word lines and bit lines within selected array blocks, for conveying data information to and from selected memory cells within selected array blocks, and for conveying unselected bias conditions to unselected array blocks.
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