- 专利标题： SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETs
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申请号： US11866627申请日： 2007-10-03
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公开(公告)号： US20080026534A1公开(公告)日： 2008-01-31
- 发明人: Phaedon Avouris , Roy Carruthers , Jia Chen , Christophe Detavernier , Christian Lavoie , Hon-Sum Wong
- 申请人： Phaedon Avouris , Roy Carruthers , Jia Chen , Christophe Detavernier , Christian Lavoie , Hon-Sum Wong
- 申请人地址： US NY Armonk 10504
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk 10504
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.
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