Invention Application
US20080026547A1 Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device
有权
形成多晶硅图案的方法，具有多晶硅图案的二极管，具有多晶硅图案的多层交叉点电阻式存储器件以及制造二极管和存储器件的方法
- Patent Title: Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device
- Patent Title (中): 形成多晶硅图案的方法，具有多晶硅图案的二极管，具有多晶硅图案的多层交叉点电阻式存储器件以及制造二极管和存储器件的方法
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Application No.: US11713738Application Date: 2007-03-05
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Publication No.: US20080026547A1Publication Date: 2008-01-31
- Inventor: Huaxiang Yin , Young-soo Park , Wenxu Xianyu , Hans S. Cho
- Applicant: Huaxiang Yin , Young-soo Park , Wenxu Xianyu , Hans S. Cho
- Assignee: Samsung Electronics Co. Ltd.
- Current Assignee: Samsung Electronics Co. Ltd.
- Priority: KR10-2006-0070884 20060727
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method of forming a poly-silicon pattern may include forming an amorphous silicon pattern on a lower layer; forming a capping layer on the substrate covering the amorphous silicon pattern; poly-crystallizing the amorphous silicon pattern using an excimer laser annealing process; and removing the capping layer.
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