发明申请
US20080026575A1 Dispenser system for atomic beam assisted metal organic chemical vapor deposition (MOCVD)
失效
原子束辅助金属有机化学气相沉积（MOCVD）分配器系统
- 专利标题： Dispenser system for atomic beam assisted metal organic chemical vapor deposition (MOCVD)
- 专利标题（中）： 原子束辅助金属有机化学气相沉积（MOCVD）分配器系统
-
申请号： US11495335申请日： 2006-07-28
-
公开(公告)号： US20080026575A1公开(公告)日： 2008-01-31
- 发明人: Supratik Guha , Fenton R. McFeely , John J. Yurkas
- 申请人： Supratik Guha , Fenton R. McFeely , John J. Yurkas
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A dispenser system for use in atomic beam assisted metal organic chemical vapor deposition is provided as well as a method of depositing an ultra-thin film using the same. The inventive dispenser system includes an atomic source having an unimpeded line of site to a substrate and an annular metal organic chemical vapor deposition showerhead having a plurality of nozzles for delivering a precursor to the substrate. In accordance with the present invention, each of the nozzles present on the showerhead is angled to provide precursor beam trajectories that crossover and are non-intercepting.