发明申请
- 专利标题: LPCVD gate hard mask
- 专利标题(中): LPCVD门硬掩模
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申请号: US11492316申请日: 2006-07-25
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公开(公告)号: US20080026584A1公开(公告)日: 2008-01-31
- 发明人: Rajesh Kanuri , Chorng-Ping Chang , Christopher Dennis Bencher , Hoiman Hung
- 申请人: Rajesh Kanuri , Chorng-Ping Chang , Christopher Dennis Bencher , Hoiman Hung
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A gate hard mask is deposited on a gate structure using low pressure chemical vapor deposition (LPCVD). By doing so, the wet etch removal ratio (WERR) of the gate hard mask relative to the underlying polysilicon gate layer is increased when compared to prior art hard masks. The LPCVD gate hard mask will not only etch faster than prior art hard masks, but it will also reduce undercutting of the gate oxide. To provide additional control of the wet etch rate, the LPCVD hard mask can be annealed. The annealing can be tailored to achieve the desired etching rate.
公开/授权文献
- US07547621B2 LPCVD gate hard mask 公开/授权日:2009-06-16