发明申请
US20080030191A1 MAGNETIC SENSOR CIRCUIT, SEMICONDUCTOR DEVICE, AND MAGNETIC SENSOR DEVICE
审中-公开
磁传感器电路,半导体器件和磁传感器器件
- 专利标题: MAGNETIC SENSOR CIRCUIT, SEMICONDUCTOR DEVICE, AND MAGNETIC SENSOR DEVICE
- 专利标题(中): 磁传感器电路,半导体器件和磁传感器器件
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申请号: US11828216申请日: 2007-07-25
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公开(公告)号: US20080030191A1公开(公告)日: 2008-02-07
- 发明人: Hidetoshi Nishikawa
- 申请人: Hidetoshi Nishikawa
- 申请人地址: JP Kyoto 615-8585
- 专利权人: ROHM CO., LTD.
- 当前专利权人: ROHM CO., LTD.
- 当前专利权人地址: JP Kyoto 615-8585
- 优先权: JP2006-203592 20060726
- 主分类号: G01R33/02
- IPC分类号: G01R33/02
摘要:
A magnetic sensor circuit has Hall devices 10X and 10Y, selection switch circuits 20X and 20Y, amplifier units 30X ad 30Y, a comparison unit 60, capacitors 41X, 42X, 41Y, and 42Y, and switch circuits 51 and 52. The Hall voltages obtained from the Hall devices 10X and 10Y are outputted in either of a first and a second states switched by the selection switch circuits 20X and 20Y. The amplifier units 30X ad 30Y each operate differentially and, if the difference between their outputs is greater than a set hysteresis width, the output logic of a detection signal Sdet is shifted. This configuration helps reduce the influence of device offset voltages in the Hall devices, and also helps reduce the influence of input offset voltages arising in the amplifiers.
公开/授权文献
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