发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11905233申请日： 2007-09-28
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公开(公告)号： US20080032493A1公开(公告)日： 2008-02-07
- 发明人: Hikoshi Hanji , Yasuhiro Matsui
- 申请人： Hikoshi Hanji , Yasuhiro Matsui
- 申请人地址： JP Tokyo
- 专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2003-195021 20030710
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A semiconductor device includes a fuse wire, a portion to be fused that overlies the fuse wire with an insulation film interposed therebetween, and a plug connecting the portion to be fused and the fuse wire together. The portion to be fused underlies an insulation film having a thickness, and the fuse wire underlies an insulation film having a thickness larger than that of the insulation film overlying the portion to be fused. The insulation film overlying the fuse wire has a thickness sufficient to prevent a laser beam from blowing the fuse wire.