发明申请
- 专利标题： One-time programmable memory
- 专利标题（中）： 一次性可编程存储器
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申请号： US11889174申请日： 2007-08-09
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公开(公告)号： US20080036033A1公开(公告)日： 2008-02-14
- 发明人: Akira Ito , Henry Chen
- 申请人： Akira Ito , Henry Chen
- 申请人地址： US CA Irvine
- 专利权人： Broadcom Corporation
- 当前专利权人： Broadcom Corporation
- 当前专利权人地址： US CA Irvine
- 主分类号： H01L27/112
- IPC分类号： H01L27/112 ; H01L21/82
摘要：
A one-time programmable memory. The memory has a substrate, a diffused electrode disposed on the substrate, a shallow trench isolation (STI) region formed on the substrate, a insulator formed on the STI region and the substrate, and a second electrode. The insulator separates the second electrode from the diffused electrode. At least a part of the second electrode overlaps at least a part of the STI region.
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IPC分类:
