发明申请
- 专利标题: PACKAGE-BASE STRUCTURE OF POWER SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS OF THE SAME
- 专利标题(中): 功率半导体器件的封装结构及其制造工艺
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申请号: US11836036申请日: 2007-08-08
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公开(公告)号: US20080036045A1公开(公告)日: 2008-02-14
- 发明人: Chih-Ming Chen , Ching-Chi Cheng , An-Nong Wen
- 申请人: Chih-Ming Chen , Ching-Chi Cheng , An-Nong Wen
- 申请人地址: TW Hsinchu
- 专利权人: SILICON BASE DEVELOPMENT INC.
- 当前专利权人: SILICON BASE DEVELOPMENT INC.
- 当前专利权人地址: TW Hsinchu
- 优先权: TW095129113 20060808
- 主分类号: H01L31/036
- IPC分类号: H01L31/036 ; H01L21/44
摘要:
A process of manufacturing a package base of a power semiconductor device includes the following steps. Firstly, a semiconductor substrate including a first surface and a second surface is provided. Then, a portion of the semiconductor substrate is patterned and removed to form a recess on the first surface of the semiconductor substrate, which serves as a receiving space for receiving a power semiconductor element therein. Then, a conducting layer is overlaid on the first surface including the receiving space. Afterward, a portion of the conducting layer is patterned and removed to form a conducting structure to be electrically connected to the power semiconductor device.
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