Invention Application
- Patent Title: Semiconductor device and method for manufacturing a semiconductor device having improved heat dissipation capabilities
- Patent Title (中): 用于制造具有改善的散热能力的半导体器件的半导体器件和方法
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Application No.: US11827042Application Date: 2007-07-09
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Publication No.: US20080036073A1Publication Date: 2008-02-14
- Inventor: Ta-Te Chou , Xiong-Jie Zhang , Xian Li , Hai Fu , Yong-Qi Tian
- Applicant: Ta-Te Chou , Xiong-Jie Zhang , Xian Li , Hai Fu , Yong-Qi Tian
- Assignee: Vishay General Semiconductor LLC
- Current Assignee: Vishay General Semiconductor LLC
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L21/00

Abstract:
A semiconductor device mountable to a substrate includes a semiconductor die and an electrically conductive attachment region having a first attachment surface and a second attachment surface. The first attachment surface is arranged for electrical communication with the semiconductor die. A housing at least in part encloses the semiconductor die and the interlayer material. The housing has a recess disposed through the second attachment surface of the electrically conductive attachment region. A dielectric, thermally conductive interlayer material is located in the recess and secured to the housing. A metallic plate is located in the recess and secured to the interlayer material.
Public/Granted literature
Information query
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