发明申请
- 专利标题： Method of manufacturing image sensor
- 专利标题（中）： 图像传感器的制造方法
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申请号： US11878829申请日： 2007-07-27
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公开(公告)号： US20080038865A1公开(公告)日： 2008-02-14
- 发明人: Doo-won Kwon
- 申请人： Doo-won Kwon
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2006-0074835 20060808
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
Provided is a method of manufacturing an image sensor which may include forming a plurality of photoelectric converters on a semiconductor substrate, forming a silicon nitride (SiN) film on the plurality of photoelectric converters, supplying plasma gas including hydrogen to the SiN film, and performing a heat treatment on the semiconductor substrate.
公开/授权文献
- US07892877B2 Method of manufacturing image sensor 公开/授权日：2011-02-22