发明申请
US20080049801A1 Edge-emitting semiconductor laser chip 有权
边缘发射半导体激光芯片

Edge-emitting semiconductor laser chip
摘要:
What is specified is an edge emitting semiconductor laser chip comprising a carrier substrate (1), an interlayer (2) promoting adhesion between the carrier substrate (1) and a component structure (50) of the edge emitting semiconductor laser chip, and the component structure (50) comprising an active zone (5) provided for generating radiation.
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